3sk41 Datasheet Jun 2026

The 3SK41 was developed in the late 1970s and early 1980s by Japanese manufacturers like Hitachi, NEC, and Sanyo. It was famously used in the RF front-ends of high-end analog television tuners (Channels 1-12) and FM radio receivers.

I can tailor my support to help you integrate or replace this component successfully! Share public link

– Connects to the substrate/ground, often tied directly to a ground plane to minimize inductance.

I was unable to locate a specific datasheet for a component labeled in my available technical databases or general search results. 3sk41 datasheet

VGS(off)cap V sub cap G cap S open paren o f f close paren end-sub ) : 4.0V maximum. Package Design & Pinout Configuration

is primarily documented as a high-performance N-channel dual-gate MOSFET

If you are designing a new circuit, it is highly recommended to look for modern silicon or GaAs dual-gate MOSFETs/MESFETs. Common replacements in legacy repairs or alternative modern parts include: The 3SK41 was developed in the late 1970s

The 3SK41 is an (Metal-Oxide-Semiconductor Field-Effect Transistor). Unlike a standard MOSFET with one gate, the dual-gate structure (Gate 1 and Gate 2) allows for superior performance in:

I can provide target resistor values or schematic modification advice for your repair. AI responses may include mistakes. Learn more Share public link

Note: When replacing a through-hole TO-72 component like the 3SK41 with a modern surface-mount alternative like the BF998, a small breakout adapter board may be required to match the legacy PCB footprint. Share public link – Connects to the substrate/ground,

The gain of the signal flowing through Gate 1 can be dynamically attenuated or boosted by varying the DC bias voltage applied to Gate 2. Equivalent Components and Substitutes

By varying the DC bias voltage applied to Gate 2, you can seamlessly control the overall gain of the amplifier stage without heavily detuning the input tank circuit attached to Gate 1. Common Applications

The 3SK41 acts as an efficient, low-distortion mixer. The incoming RF signal is fed to Gate 1, while the Local Oscillator (LO) signal is fed to Gate 2. The nonlinear mixing action inside the channel produces the desired Intermediate Frequency (IF) at the drain output. This method provides excellent isolation between the RF and LO ports. 6. Tips for Circuit Design and Handling